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Zener Diodes Composite Elements MA111 MAZE062D Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit s Features q S-Mini q Low q Two Unit : mm 2.10.1 0.425 1.250.1 0.425 2.00.2 1.30.1 0.65 0.65 1 3 2 type package (3-pin) joint capacity zener diode (VZ= 6.2V) anode-common element wiring 0.90.1 s Absolute Maximum Ratings (Ta= 25C) Parameter Instanious forward current Total power dissipation Junction temperature Storage temperature * With a printed-circuit board 2 Symbol IFRM Ptot* Tj Tstg Rating 200 150 150 - 55 to + 150 Unit mA mW C C 1 1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Flat S-Mini Type Package (3-pin) s Internal Connection 3 1 s Electrical Characteristics (Ta= 25C)* Parameter Forward voltage Zener voltage Operating resistance Reverse current Terminal capacitance Symbol VF VZ*2 RZK RZ IR Ct IF=10mA IZ= 5mA IZ= 0.5mA IZ= 5mA VR= 5.5V VR= 0V, f=1MHz 8 5.9 Condition min typ 0.9 max 1.0 6.5 100 30 3 Unit V V A pF Note 1. Rated input/output frequency : 5MHz 2. Test method : Depend on JIS C7031 testing 3. Electrostatic discharge is 15kV Test method : IEC-801(C=150pF, R=330, Contact discharge : 10 times) Test unit : ESS-200AX 4. * 1 : The VZ value is for the temperature of 25C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application s Marking 6.2C 0.15-0.05 +0.1 0.3-0 +0.1 |
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